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| SBD MODULE FEATURES 80A/100V P2H80QH10 OUTLINE DRAWING * Compatible with Isolated Base SOT227 * Dual Separated Diodes * Extremely Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability See the Next Page TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings Parameter Repetitive Peak Reverse Voltage *1 Non Repetitive Peak Reverse Voltage *1 Approx Net Weight:35g Symbol VRRM VRSM Type / Grade P2H80QH10 100 Max Rated Value Unit V Parameter Average Rectified Output Current *1 Surge Forward Current *1 Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Terminals Mounting torque Case mounting IO(AV) IFSM Tjw Tstg Viso Ftor Conditions 50Hz Half Sine Wave condition Tc=94C 50 Hz Half Sine Wave,1Pulse Non-repetitive Unit A A 80 400 -40 to +150 C -40 to +125 C Base Plate to Terminals, AC1min 2500 V M4Screw 1.5(1.4) N*m M4Screw 1.5(1.4) with Thermal Compound Electrical * Thermal Characteristics Characteristics Peak Reverse Current *1 Peak Forward Voltage *1 Thermal Resistance *1 *1: Value Per 1Arm Symbol Test Conditions Max. 40 0.97 0.53 0.3 Unit A V C/W IRM VRM= VRRM, Tj= 25C VFM IFM= 80A, Tj=25C Rth(j-c) Junction to Case Base Plate to Heat Sink with Thermal Rth(c-f) Compound P2H80QH10 OUTLINE DRAWING (Dimensions in mm) |
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